HMSR 6-SMS

Integrated Current Sensor HMSR-SMS series Ref: IP N = 6 ... 30 A HMSR 6-SMS, HMSR 8-SMS, HMSR 10-SMS, HMSR 15-SMS, HMSR 20-SMS, HMSR 30-SMS Definition The HMSR is a new generation of high insulated Integrated Current Sensor from LEM. These product family provides a robust, compact and very accurate solution for measuring DC and AC currents in all highly demanding, switching power applications for commercial, industrial. HMSR is a micro core based open loop sensor with a reinforced insulation and overcurrent detections (user configurable and factory set). These features make the device suitable for high voltage applications requiring high precision and strong immunity against external field. The primary conductor (pins 1 and 8) has very low electrical resistance and dedicated pads designed to withstand against high surge currents such as lightning strikes. HMSR is measuring the magnetic field generated by the current flowing in the copper primary path of the device. By using a micro magnetic core, HMSR is immune to the external fields, making the device well suited for power electronic applications with high levels of disturbance. The reinforced isolation between primary (pins 1 and 8) and secondary (pins 9 to 15) offers the HSMR, a small, cost effective solution to measure high side current compared to resistive isolated solutions. Features Applications ● Open loop multi-range current transducer ● Small drives ● Voltage output ● HVAC Inverters ● Double overcurrent detection ● Appliances ● Single power supply +5 V ● Solar Inverters. ● Galvanic separation between primary and secondary ● Low power consumption Standards ● Compact design for surface mount PCB mounting ● IEC 61800-5-1: 2007 ● Factory calibrated ● IEC 62109-1: 2010 ● High bandwidth, very low loss magnetic core. ● IEC 60950-1: 2005 ● UL 1577: 2014 (pending). Advantages ● Low profile: h = 6 mm Application Domains ● Small foot-print ● Industrial ● Low electrical resistance 0.76 mΩ ● Automotive (pending). ● Reinforced insulation capability ● High resolution ● High immunity to external interference ● Lightning impulse current ≤ 20 kA. N°97.T4.09.000.0; N°97.T4.11.000.0; N°97.T4.13.000.0; N°97.T4.15.000.0 ; N°97.T4.17.000.0; N°97.T4.23.000.0 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice Page 1/17 LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series Safety ⚠ Caution If the device is used in a way that is not specified by the manufacturer, the protection provided by the device may be compromised. Always inspect the electronics unit and connecting cable before using this product and do not use it if damaged. Mounting assembly shall guarantee the maximum primary conductor temperature, fulfill clearance and creepage distance, minimize electric and magnetic coupling, and unless otherwise specified can be mounted in any orientation. Caution, risk of electrical shock This transducer must be used in limited-energy secondary circuits SELV according to IEC 61010-1, in electric/electronic equipment with respect to applicable standards and safety requirements in accordance with the manufacturer’s operating specifications. Use caution during installation and use of this product; certain parts of the module can carry hazardous voltages and high currents (e.g. power supply, primary conductor). Ignoring this warning can lead to injury and or/or cause serious damage. De-energize all circuits and hazardous live parts before installing the product. All installations, maintenance, servicing operations and use must be carried out by trained and qualified personnel practicing applicable safety precautions. This transducer is a build-in device, whose hazardous live parts must be inaccessible after installation. This transducer must be mounted in a suitable end-enclosure. Main supply must be able to be disconnected. This transducer is a built-in device, not intended to be cleaned with any product. Nevertheless if the user must implement cleaning or washing process, validation of the cleaning program has to be done by the user in accordance with semi-conductor practices. ESD susceptibility The product is susceptible to be damaged from an ESD event and the personnel and work space should be grounded when handling it. Do not dispose of this product as unsorted municipal waste. Contact a qualified recycler for disposal. Although LEM applies utmost care to facilitate compliance of end products with applicable regulations during LEM product design, use of this part may need additional measures on the application side for compliance with regulations regarding EMC and protection against electric shock. Therefore LEM cannot be held liable for any potential hazards, damages, injuries or loss of life resulting from the use of this product. Page 2/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series Absolute maximum ratings Parameter Symbol Unit Value Maximum supply voltage UC max V 8 Maximum supply voltage (working) (−40 … 125 °C) UC max V 6.5 Electrostatic discharge voltage (HBM - Human Body Model) UESD HBM kV 2 Electrostatic discharge voltage (CDM - Charged Device Model) UESD CDM V 500 Maximum output current source Iout max mA 25 Maximum input current sink Iin max mA 50 Maximum junction temperature TJ max °C 150 Absolute maximum ratings apply at 25 °C unless otherwise noted. Stresses above these ratings may cause permanent damage. Exposure to absolute maximum ratings for extended periods may degrade reliability. Page 3/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series Environmental and mechanical characteristics Parameter Symbol Unit Min TA °C −40 125 Ambient storage temperature TA st °C −55 165 Resistance of the primary @ TA = 25 °C RP mΩ 0.76 Thermal resistance junction to case 1) Rth JC K/W 18 Thermal resistance junction to ambient 1) Rth JA K/W 19 m g 1.4 Ambient operating temperature Mass Typ Max Comment Insulation coordination Parameter Symbol Unit ≤ Value RMS voltage for AC insulation test, 50 Hz, 1 min Ud kV 4.95 According to IEC 60950-1 Impulse withstand voltage 1.2/50 μs UNi kV 8 According to IEC 62109-1, IEC 61800-5-1 Partial discharge RMS test voltage (qm < 5 pC) Ut V 1650 According to IEC 62109-1, IEC 61800-5-1 Clearance (pri. - sec.) dCI mm 8 Shortest distance through air Creepage distance (pri. - sec.) dCp mm 8 Shortest path along device body - - Case material Comparative tracking index CTI Comment V0 According to UL 94, flamability 600 grade requirements mas compand Application example System voltage RMS V 1000 Basic insulation according to IEC 61800-5-1, IEC 62109-1, IEC 60950-1 CAT III, PD2 Application example System voltage RMS V 600 Reinforced insulation according to IEC 61800-5-1, IEC 62109-1, IEC 60950-1 CAT III, PD2 Application example System voltage DC V 1500 Basic insulation according to IEC 62109-1 CAT III, PD2 Application example System voltage DC V 800 Reinforced insulation according to IEC 62109-1 CAT III, PD2 Note: 1) Done on LEM evaluation board PCB 6030: https://www.lem.com/en/hmsr-miniature-current-sensors. Page 4/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series Electrical data HMSR 6-SMS At TA = 25 °C, UC = 5 V, RL = 10 kΩ, unless otherwise noted (see Min, Max, typ, definition paragraph in page 11). Parameter Symbol Unit Min Primary nominal current IP N A Primary current, measuring range IP M A −15 Typ Max 6 15 UI ref V 2.48 Uout − Uref V −2 Output Internal resistance of Uout Rout Ω 2 5 Output Internal resistance of Uref Rref Ω 120 200 333 Load capacitance on Uout CL nF 0 4.7 6 Load capacitance on Uref CL nF 0 47 100 DC supply voltage ⎓ UC V 4.5 5 5.5 26 Internal reference voltage @ IP = 0 A Output voltage range @ IP M 2.5 With ±UC ≥ 4.6 V 2.52 2 DC current consumption ⎓ IC mA 20 Nominal sensitivity SN mV/A 133.33 800 mV @ IP N εS % −0.75 0.75 Sum of sensitivity and linearity error @ TA = 25 °C εS L 25 % of IP N −1.5 1.5 Electrical offset voltage referred to primary UO E mV −5 5 Electrical offset current referred to primary IO E mA −37.5 37.5 Sensitivity error Comment Factory adjustment Uout − UI ref @ UI ref = 2.5 V TCS ppm/K −220 220 −40 °C ... 125 °C Temperature coefficient of UI ref TCUI ref ppm/K −150 150 −40 °C ... 125 °C Temperature coefficient of S Temperature coefficient of UO E TCUO E mV/K −0.1 0.1 −40 °C ... 125 °C Temperature coefficient of IO E referred to primary TCIO E mA/K −0.56 0.56 −40 °C ... 125 °C Magnetic offset current after overload (IP > 500 A) referred to primary IO M A 0.18 Noise voltage spectral density referred to primary uno µV/Hz1/2 14.8 Internal OCD detection threshold II OCD Th A 2.75 x IP N 25 °C ... 125 °C Internal OCD threshold error ε I OCD Th % ±10 Referred to IP N Internal OCD output on resistance R on I OCD Ω 70 εL % Linearity error 0 ... ±IP N Linearity error 0 ... ±IP M Delay time @ 10 % of the final output value IP N step εL % tD 10 µs tD 90 µs tD I OCD µs Frequency bandwidth (−3 dB) BW kHz Internal OCD output hold time thold I OCD µs Delay time @ 90 % of the final output value IP N step Internal OCD delay time 95 100 Hz ... 100 kHz 100 Open drain output, active low −0.75 0.75 Referred to IP N −0.5 0.5 Referred to IP M 1.5 2 1.4 1.7 2.1 300 7 10 14 Page 5/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series Electrical data HMSR 8-SMS At TA = 25 °C, UC = 5 V, RL = 10 kΩ, unless otherwise noted (see Min, Max, typ, definition paragraph in page 11). Parameter Symbol Unit Min Primary nominal current IP N A Primary current, measuring range IP M A −20 Typ Max 8 20 UI ref V 2.48 Uout − Uref V −2 Output Internal resistance of Uout Rout Ω 2 5 Output Internal resistance of Uref Rref Ω 120 200 333 Load capacitance on Uout CL nF 0 4.7 6 Load capacitance on Uref CL nF 0 47 100 DC supply voltage ⎓ UC V 4.5 5 5.5 26 Internal reference voltage @ IP = 0 A Output voltage range @ IP M 2.5 With ±UC ≥ 4.6 V 2.52 2 DC current consumption ⎓ IC mA 20 Nominal sensitivity SN mV/A 100 800 mV @ IP N εS % −0.75 0.75 Sum of sensitivity and linearity error @ TA = 25 °C εS L 25 % of IP N −1.5 1.5 Electrical offset voltage referred to primary UO E mV −5 5 Electrical offset current referred to primary IO E mA −50 50 Sensitivity error Comment Factory adjustment Uout − UI ref @ UI ref = 2.5 V TCS ppm/K −200 200 −40 °C ... 125 °C Temperature coefficient of UI ref TCUI ref ppm/K −150 150 −40 °C ... 125 °C Temperature coefficient of S Temperature coefficient of UO E TCUO E mV/K −0.1 0.1 −40 °C ... 125 °C Temperature coefficient of IO E referred to primary TCIO E mA/K −0.75 0.75 −40 °C ... 125 °C Magnetic offset current after overload (IP > 500 A) referred to primary IO M A 0.18 Noise voltage spectral density referred to primary uno µV/Hz1/2 12.2 Internal OCD detection threshold II OCD Th A 2.75 x IP N 25 °C ... 125 °C Internal OCD threshold error ε I OCD Th % ±10 Referred to IP N Internal OCD output on resistance R on I OCD Ω 70 εL % Linearity error 0 ... ±IP N Linearity error 0 ... ±IP M Delay time to 10 % of the final output value for IP N step εL % tD 10 µs tD 90 µs tD I OCD µs Frequency bandwidth (−3 dB) BW kHz Internal OCD output hold time thold I OCD µs Delay time @ 90 % of the final output value for IP N step Internal OCD delay time 95 100 Hz ... 100 kHz 100 Open drain output, active low −0.75 0.75 Referred to IP N −0.5 0.5 Referred to IP M 1.5 2 1.4 1.7 2.1 300 7 10 14 Page 6/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series Electrical data HMSR 10-SMS At TA = 25 °C, UC = 5 V, RL = 10 kΩ, unless otherwise noted (see Min, Max, typ, definition paragraph in page 11). Parameter Symbol Unit Min Primary nominal current IP N A Primary current, measuring range IP M A −25 Typ Max 10 25 UI ref V 2.48 Uout − Uref V −2 Output Internal resistance of Uout Rout Ω 2 5 Output Internal resistance of Uref Rref Ω 120 200 333 Load capacitance on Uout CL nF 0 4.7 6 Load capacitance on Uref CL nF 0 47 100 DC supply voltage ⎓ UC V 4.5 5 5.5 DC current consumption ⎓ IC mA 20 26 Nominal sensitivity SN mV/A Sensitivity error εS % Internal reference voltage @ IP = 0 A Output voltage range @ IP M Sum of sensitivity and linearity error @ TA = 25 °C εS L 25 Electrical offset voltage referred to primary UO E Comment 2.5 With ±UC ≥ 4.6 V 2.52 2 800 mV @ IP N 80 −0.75 0.75 % of IP N −1.25 1.25 mV −5 5 Factory adjustment Uout − UI ref @ UI ref = 2.5 V Electrical offset current referred to primary IO E mA −62.5 62.5 Temperature coefficient of S TCS ppm/K −200 200 −40 °C ... 125 °C 150 −40 °C ... 125 °C Temperature coefficient of UI ref TCUI ref ppm/K −150 Temperature coefficient of UO E TCUO E mV/K −0.075 0.075 −40 °C ... 125 °C Temperature coefficient of IO E referred to primary TCIO E mA/K −0.94 0.94 Magnetic offset current after overload (IP > 500 A) referred to primary IO M A 0.18 Noise voltage spectral density referred to primary uno µV/Hz1/2 8.6 Internal OCD detection threshold II OCD Th A 2.75 x IP N 25 °C ... 125 °C Internal OCD threshold error ε I OCD Th % ±10 Referred to IP N Internal OCD output on resistance R on I OCD Ω 70 εL % Linearity error 0 ... ±IP N Linearity error 0 ... ±IP M Delay time @ 10 % of the final output value IP N step εL % tD 10 µs tD 90 µs tD I OCD µs Frequency bandwidth (−3 dB) BW kHz Internal OCD output hold time thold I OCD µs Delay time @ 90 % of the final output value IP N step Internal OCD delay time 95 −40 °C ... 125 °C 100 Hz ... 100 kHz 100 Open drain output, active low −0.5 0.5 Referred to IP N −0.5 0.5 Referred to IP M 1.5 2 1.4 1.7 2.1 300 7 10 14 Page 7/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series Electrical data HMSR 15-SMS At TA = 25 °C, UC = 5 V, RL = 10 kΩ, unless otherwise noted (see Min, Max, typ, definition paragraph in page 11). Parameter Symbol Unit Min Primary nominal current IP N A Primary current, measuring range IP M A −37.5 Typ Max 15 37.5 UI ref V 2.48 Uout − Uref V −2 Output Internal resistance of Uout Rout Ω 2 5 Output Internal resistance of Uref Rref Ω 120 200 333 Internal reference voltage @ IP = 0 A Output voltage range @ IP M 2.5 2 Load capacitance on Uout CL nF 0 4.7 6 CL nF 0 47 100 DC supply voltage ⎓ UC V 4.5 5 5.5 26 DC current consumption ⎓ IC mA 20 Nominal sensitivity SN mV/A 53.33 Sensitivity error εS % εS L 25 Electrical offset voltage referred to primary UO E With ±UC ≥ 4.6 V 2.52 Load capacitance on Uref Sum of sensitivity and linearity error @ TA = 25 °C Comment 800 mV @ IP N −0.75 0.75 % of IP N −1.25 1.25 mV −5 5 93.75 Factory adjustment Uout − UI ref @ UI ref = 2.5 V Electrical offset current referred to primary IO E mA −93.75 Temperature coefficient of S TCS ppm/K −200 200 −40 °C ... 125 °C Temperature coefficient of UI ref TCUI ref ppm/K −150 150 −40 °C ... 125 °C Temperature coefficient of UO E TCUO E mV/K −0.075 0.075 −40 °C ... 125 °C Temperature coefficient of IO E referred to primary TCIO E mA/K −1.41 1.41 Magnetic offset current after overload (IP > 500 A) referred to primary IO M A 0.18 Noise voltage spectral density referred to primary uno µV/Hz1/2 6.3 Internal OCD detection threshold II OCD Th A 2.75 x IP N 25 °C ... 125 °C Internal OCD threshold error ε I OCD Th % ±10 Referred to IP N Internal OCD output on resistance R on I OCD Ω 70 Linearity error 0 ... ±IP N εL % Linearity error 0 ... ±IP M εL % Delay time @ 10 % of the final output value IP N step tD 10 µs 1.5 Delay time @ 90 % of the final output value IP N step tD 90 µs 2 tD I OCD µs Frequency bandwidth (−3 dB) BW kHz Internal OCD output hold time thold I OCD µs Internal OCD delay time 100 Hz ... 100 kHz 100 Open drain output, active low −0.5 0.5 Referred to IP N −0.5 0.5 Referred to IP M 1.4 95 −40 °C ... 125 °C 1.7 2.1 300 7 10 14 Page 8/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series Electrical data HMSR 20-SMS At TA = 25 °C, UC = 5 V, RL = 10 kΩ, unless otherwise noted (see Min, Max, typ, definition paragraph in page 11). Parameter Primary nominal current Symbol Unit IP N A Min Typ Max Primary current, measuring range IP M A −50 Internal reference voltage @ IP = 0 A UI ref V 2.48 Uout − Uref V −2 Output Internal resistance of Uout Rout Ω 2 5 Output Internal resistance of Uref Rref Ω 120 200 333 Load capacitance on Uout CL nF 0 4.7 6 Load capacitance on Uref CL nF 0 47 100 DC supply voltage ⎓ UC V 4.5 5 5.5 DC current consumption ⎓ IC mA 20 26 Nominal sensitivity SN mV/A 40 Output voltage range @ IP M εS Sensitivity error % Comment 20 50 2.5 With ±UC ≥ 4.6 V 2.52 2 800 mV @ IP N −0.75 0.75 % of IP N −1.25 1.25 Sum of sensitivity and linearity error @ TA = 25 °C εS L 25 Electrical offset voltage referred to primary UO E mV −5 5 Electrical offset current referred to primary IO E mA −125 125 Factory adjustment Uout − UI ref @ UI ref = 2.5 V TCS ppm/K −200 200 −40 °C ... 125 °C Temperature coefficient of UI ref TCUI ref ppm/K −150 150 −40 °C ... 125 °C Temperature coefficient of S Temperature coefficient of UO E TCUO E mV/K −0.075 0.075 −40 °C ... 125 °C Temperature coefficient of IO E referred to primary TCIO E mA/K −1.88 1.88 Magnetic offset current after overload (IP > 500 A) referred to primary IO M A 0.18 Noise voltage spectral density referred to primary uno µV/Hz1/2 4.5 Internal OCD detection threshold II OCD Th A 2.75 x IP N 25 °C ... 125 °C Internal OCD threshold error ε I OCD Th % ±10 Referred to IP N Internal OCD output on resistance R on I OCD Ω 70 εL % Linearity error 0 ... ±IP N Linearity error 0 ... ±IP M Delay time @ 10 % of the final output value IP N step εL % tD 10 µs tD 90 µs tD I OCD µs Frequency bandwidth (−3 dB) BW kHz Internal OCD output hold time thold I OCD µs Delay time @ 90 % of the final output value IP N step Internal OCD delay time 95 −40 °C ... 125 °C 100 Hz ... 100 kHz 100 Open drain output, active low −0.5 0.5 Referred to IP N −0.5 0.5 Referred to IP M 1.5 2 1.4 1.7 2.1 300 7 10 14 Page 9/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series Electrical data HMSR 30-SMS At TA = 25 °C, UC = 5 V, RL = 10 kΩ, unless otherwise noted (see Min, Max, typ, definition paragraph in page 11). Parameter Symbol Unit Min Primary nominal current IP N A Primary current, measuring range IP M A −75 UI ref V 2.48 V −2 Output Internal resistance of Uout Rout Ω Output Internal resistance of Uref Rref Ω Output voltage range @ IP M Max Comment 75 With ±UC ≥ 4.6 V, TA < 75 °C 1) 30 Uout − Uref Internal reference voltage @ IP = 0 A Typ 2.5 2.52 2 2 5 120 200 333 Load capacitance on Uout CL nF 0 4.7 6 Load capacitance on Uref CL nF 0 47 100 DC supply voltage ⎓ UC V 4.5 5 5.5 DC current consumption ⎓ IC mA 20 26 Nominal sensitivity SN mV/A 26.67 εS Sensitivity error % 800 mV @ IP N −0.75 0.75 % of IP N −1.25 1.25 Sum of sensitivity and linearity error @ TA = 25 °C εS L 25 Electrical offset voltage referred to primary UO E mV −5 5 Electrical offset current referred to primary IO E mA −187.5 187.5 Factory adjustment Uout − UI ref @ UI ref = 2.5 V TCS ppm/K −200 200 −40 °C ... 125 °C Temperature coefficient of UI ref TCUI ref ppm/K −150 150 −40 °C ... 125 °C Temperature coefficient of S Temperature coefficient of UO E TCUO E mV/K −0.075 0.075 −40 °C ... 125 °C Temperature coefficient of IO E referred to primary TCIO E mA/K −2.81 2.81 Magnetic offset current after overload (IP > 500 A) referred to primary IO M A 0.18 Noise voltage spectral density referred to primary uno µV/Hz1/2 3.2 Internal OCD detection threshold II OCD Th A 2.75 x IP N 25 °C ... 125 °C Internal OCD threshold error ε I OCD Th % ±10 Referred to IP N Internal OCD output on resistance R on I OCD Ω 70 εL % Linearity error 0 ... ±IP N 95 100 Hz ... 100 kHz 100 Open drain output, active low −0.5 0.5 Referred to IP N −0.5 0.5 Referred to IP M εL % Delay time @ 10 % of the final output value IP N step tD 10 µs 1.5 Delay time @ 90 % of the final output value IP N step tD 90 µs 2 Linearity error 0 ... ±IP M tD I OCD µs Frequency bandwidth (−3 dB) BW kHz Internal OCD output hold time thold I OCD µs Internal OCD delay time −40 °C ... 125 °C 1.4 1.7 2.1 300 7 10 14 Note: 1) See figure 2. Page 10/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series Sum of sensitivity and linearity error Figure 1: Typical value on HMSR 20-SMS (40 parts) Measuring range vs ambient temperature Figure 2 Definition of typical, minimum and maximum values Minimum and maximum values for specified limiting and safety conditions have to be understood as such as well as values shown in “typical” graphs. On the other hand, measured values are part of a statistical distribution that can be specified by an interval with upper and lower limits and a probability for measured values to lie within this interval. Unless otherwise stated (e.g. “100 % tested”), the LEM definition for such intervals designated with “min” and “max” is that the probability for values of samples to lie in this interval is 99.73 %. For a normal (Gaussian) distribution, this corresponds to an interval between −3 sigma and +3 sigma. If “typical” values are not obviously mean or average values, those values are defined to delimit intervals with a probability of 68.27 %, corresponding to an interval between −sigma and +sigma for a normal distribution. Typical, maximal and minimal values are determined during the initial characterization of the product. Page 11/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series External overcurrent detection Parameter Symbol Min Typical Max Conditions V 0.3 Ron E OCD Ω 35 200 300 Open drain output, active low tD E OCD µs 7 10 13 To be added to the sensor delay time thold E OCD µs 7 10 14 ε E OCD % External OCD delay time External OCD output hold time Specification UE OCD External OCD voltage External OCD output on resistance to ground Unit External OCD threshold error 2.5 ±6 Referred to IP N IE OCD: External overcurrent detection (OCD threshold) at Uref = 2.5 V Figure 3 IE OCD = U ref − U E OCD SN U E OCD = RE × U ref RE + Rref with 0.3 ≤ UE OCD ≤ Uref Page 12/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series Pins definition Pins number Name Description 1 I P+ Input of the primary current 8 I P− Output of the primary current 9 OCD INT 10 UC Supply voltage 11 Uref Reference voltage 12 Uout Output voltage 13 NC No internal connection 14 OCD EXT External OCD terminal 15 GND 16 UE OCD Internal OCD Ground terminal Figure 4 External OCD threshold voltage terminal Block diagram EEPROM Memory Single Wire Bus Interface Thermometer Digital Interface Offset Correction DAC’s 8x Hall Cells Corrections SPINNING Magnetic Core IP- Filter Sensitivity Adjust Clock Bias Uout DEMODULATION IP+ Voltage Reference GND UC Uref Rref Sensitivity Correction 47 nF UE OCD 47 nF UC 4.7 nF Filter Adjust RE 5V Regulator RE OCD 3.3 V Timer OCD EXT RI OCD Adjust Timeout From DAC Adjust Level Timer OCD INT Figure 5 Page 13/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com Sensitivity and linearity Total error referred to primary The total error εtot is the error at ±IP N, relative to the rated value IP N. It includes all errors mentioned above ● the electrical offset IO E ● the magnetic offset IO M ● the sensitivity error εS ● the linearity error εL (to IP N). The delay time tD 10 @ 10 % and the delay time tD 90 @ 90 % with respect to the primary are shown in the next figure. Both slightly depend on the primary current di/dt. They are measured at nominal current. aver. + 3σ 0.10 ℇtot (% IP N) 0.08 IO M (max) / IP N 0.06 I = 0.04 IO E (max) / IP N 0.02 100 % 90 % 0.00 -0.02 To measure sensitivity and linearity, the primary current (DC) is cycled from 0 to IP, then to −IP and back to 0 (equally spaced IP N/10 steps). The sensitivity S is defined as the slope of the linear regression line for a cycle between ±IP N. The linearity error εL is the maximum positive or negative difference between the measured points and the linear regression line, expressed in % of IP N. Delay times Total error ℇtot at UC = ... V and TA = 25 °C 0.12 HMSR-SMS series Terms and definitions IS IP -1 -0.5 0 0.5 IP / (KOL · IP N) with KOL = 1 ... 10 1 Figure 6: Total error εtot tD 90 10 % Electrical offset referred to primary Using the current cycle shown in figure 7, the electrical offset current IO E is the residual output referred to primary when the input current is zero. Magnetic offset referred to primary IO E = t tD 10 Figure 8: tD 10 (delay time @ 10 %) and tD 90 (delay time @ 90 %). IP (3) + IP (5) 2 The magnetic offset current IO M is the consequence of a current on the primary side (“memory effect” of the transducer’s ferromagnetic core). It is measured using the following primary current cycle. IO M depends on the current value IP ≥ IP N. KOL: Overload factor Figure 7: Current cycle used to measure magnetic and electrical offset (transducer supplied) IO M = 18June2020/version 3 IP (3) − IP (5) 2 Page 14/17 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series PCB footprint (in mm) Figure 9 Soldering on PCB Figure 10 Soldering remarks: ● HMSR is qualified MSL1 for storage and mounting purposes. ● Per JEDEC J-STD-020E for packages more than 2.5 mm thick per table 4.2 (Pb-Free Process) of the specification. ● Best practice is to use 7 zones or greater conventional reflow system, limiting the time at reflow temperature as indicated in profile above. ● Rework not recommended. Page 15/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series Dimensions (in mm) NOTES: 1) MATERIALS: Primary/Secondary: Copper 2) PLATING: All terminals: Tin-Bismuth 3) CUSTOMER MOUNTING: See PCB layout recommendation 4) NOTES: Dimensions does not include mold flashes. Protrusion or burrs shall not exceed 0.15 mm per ends. Connection Mechanical characteristics ● General tolerance ±0.15 mm Remark ● Uout − Uref is positive when IP flows in the direction of arrow (pin 1 to pin 8). Page 16/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com HMSR-SMS series Tape and Reel (in mm) Page 17/17 18June2020/version 3 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice LEM International SA Chemin des Aulx 8 1228 PLAN-LES-OUATES Switzerland www.lem.com